| PART |
Description |
Maker |
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| IHW20N120R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IKW50N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHW25N120R2 |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| IHW30N100R |
Reverse Conducting IGBT with monolithic body diode
|
INFINEON[Infineon Technologies AG]
|
| 5SHX08F4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 390 A, 4500 V, SCR
|
ABB, Ltd.
The ABB Group
|
| IGB50N60T IGB50N60T09 |
Low Loss IGBT in TrenchStop technology
|
Infineon Technologies AG
|
| IGW50N65H5 PG-TO247-3 |
High speed 5 IGBT in TRENCHSTOP 5 technology
|
Infineon Technologies AG
Infineon Technologies A...
|
| IGW40T120 IGW40T12009 |
Low Loss IGBT in TrenchStop and Fieldstop technology
|
Infineon Technologies AG
|
| IGB30N60T |
Low Loss IGBT in TrenchStop and Fieldstop technology
|
Infineon Technologies AG
|
| IGB30N60T |
Low Loss IGBT in TrenchStop and Fieldstop technology
|
Infineon Technologies A...
|
